德国SARAD离子注入式半导体探头V硅探测器

产品介绍

产品名称：离子注入式半导体探头

品牌：SARAD

产地：德国

型号：V

德国SARAD离子注入式半导体探头V介绍：

离子注入式半导探测器V用于α/β能谱测量的离子深度注入硅探测器，作为OEM部件及应用于辐射测量仪器。

离子注入式半导体探测器V的特点包括牢固设计、低本底、并且即使工作在低电压环境下依然具有优异的光谱性能；仅需10 V偏置电压，探测器即可将α粒子（**10 MeV）的全部能量沉积在耗尽层内；特别为β粒子测量设计的BS型探头，其耗尽层深度可达500 µm。

离子注入式半导体探头V既可在一般环境又可在真空条件下精确测量。 入射窗涂有用于保护探头的50 nm（V型）或500 nm（E型）超薄铝涂层，铝涂层更厚的E型探头特别适合于环境测量。

离子注入式半导体探头V采用Microdot接口（工业标准），保证了其具有与其它制造商仪器的良好兼容性，可选BNC和SMA接口型。

德国SARAD离子注入式半导体探头V参数：

中文内容来自机器翻译，内容仅供参考，实际内容可参考原厂介绍或以合同为准。

英文原文：

Ion-implanted silicon detectors for alpha spectroscopy

Key features are the robust design, low background and the outstanding spectroscopic performance even at low bias voltages. Only a 10 volts bias is required to deposit the whole emission energy of an alpha particle (up to 10 MeV) within the depletion layer. The BS types, especially designed for beta detection, provide a depleted region of 500 µm.

All types can be used under ambient conditions as well as in vacuum gauges. The entrance window is protected by an thin aluminium layer with a thickness of 50 nm (type V) or 500 nm (type E). The thicker aluminium of the E type detectors make them especially suitable for ambient light applications.

The detectors are delivered with a Microdot jack (industry standard) to guarantee the full compatibility with other manufacturers. BNC or SMA type jacks are optionally available.

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